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- W2000396811 endingPage "04C034" @default.
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- W2000396811 abstract "As device size shrinks smaller, not only random telegraph signal (RTS) noise, which is caused by the trapping and de-trapping of a single carrier but also the degradation of gate oxide due to hot-carrier stress become a serious issue. In this paper, random telegraph signal (RTS) measurements have been used to study individual hot-carrier-induced traps in n-type metal oxide semiconductor field effect transistor (nMOSFETs). Trap depth (xT), lateral location (yT), and trap energy (ECox-ET) of stress-induced traps are founded to be different from those of process-induced traps. Also, we confirmed the hot-carrier stress induced traps are located near drain region." @default.
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- W2000396811 date "2009-04-20" @default.
- W2000396811 modified "2023-10-17" @default.
- W2000396811 title "Extraction of Vertical, Lateral Locations and Energies of Hot-Electrons-Induced Traps through the Random Telegraph Noise" @default.
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- W2000396811 doi "https://doi.org/10.1143/jjap.48.04c034" @default.
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