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- W2000403875 abstract "Abstract The chemical etching of silicon in Cl 2 ambient was considered. The desorption activation energy for an SiCl 2 molecule was evaluated using an experimentally measured dependence of etching rate on concentration of Cl 2 molecules. It was found that the desorption activation energy of SiCl 2 molecules is equal to E d =(1.605±0.010) eV. This corresponds to a value of the mean lifetime of adsorbed molecules on the surface of τ =46 ms at temperature T =724 K." @default.
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- W2000403875 date "2003-05-01" @default.
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- W2000403875 title "Evaluation of desorption activation energy of SiCl2 molecules" @default.
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- W2000403875 doi "https://doi.org/10.1016/s0039-6028(03)00509-0" @default.
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