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• W2000404763 abstract "Ferroelectric BaMgF4 films have been grown on GaAs substrates with and without an AlGaAs buffer layer for metal-ferroelectric-semiconductor field effect transistor (MFSFET) applications. It is shown that the temperature range of 530–570°C is suitable to grow the (140)-oriented BaMgF4 films on GaAs. Furthermore, it is demonstrated that the AlGaAs buffer layer is effective to reduce the leakage current. Capacitance-voltage (c–v) characteristics of Al/BaMgF4/AlGaAs/n-GaAs/n+-GaAs(100) structures show a hysteresis loop with a counterclockwise trace, demonstrating the ferroelectric nature of the BaMgF4 film. On the other hand, the BaMgF4 film directly grown on GaAs substrates has clockwise-hysteresis loops due to the charge injections. It is also shown that the remanent polarization estimated from the polarization-electric field (P-E) characteristics is as large as 1.2 μC/cm2." @default.
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• W2000404763 date "1997-06-01" @default.
• W2000404763 modified "2023-10-14" @default.
• W2000404763 title "Electrical properties of ferroelectric BaMgF4 films grown on GaAs substrates using AlGaAs buffer layer" @default.
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• W2000404763 doi "https://doi.org/10.1016/s0169-4332(97)80117-1" @default.
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