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- W2000405128 abstract "An investigation is made of the de conductivity and the Hall effect in heavily dislocated Si crystals doped with boron (1013 cm−3) and phosphorus (2 × 1014 cm−3). In such crystals two levels are shown to exist, namely, donor-acceptor level with E1 = (0.42 ± 0.03) eV above the valence band and acceptor level with E2 = (0.43 ± 0.03) eV below the conduction band. Both E1- and E2-levels are assumed to be due to dislocations and to correspond to states of electrons localized in cores of dislocations with edge components. [Russian text Ignored.]" @default.
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- W2000405128 date "1977-10-16" @default.
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- W2000405128 title "Investigation of the energy spectrum and kinetic phenomena in dislocated Si crystals (I)" @default.
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- W2000405128 doi "https://doi.org/10.1002/pssa.2210430206" @default.
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