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- W2000407843 abstract "The surface composition of AlxGa1-xAs, AlxIn1-xAs and GaxIn1-x As epitaxial layers grown by moleculer beam epitaxy (MBE) has been determined in situ by X-ray photoelectron spectroscopy (XPS). The comparison of the values deduced from XPS with bulk compositions resulting from X-ray diffraction and RHEED oscillations leads to the conclusion that the most weakly bound group III element (i.e. Ga in AlxGa1-xAs, In in AlxIn1-xAs and GaxIn1-xAs) segregates at the alloy surface. The key rôle of of the surface temperature is illustrated in the case of AlxGa1-xAs alloys for which a large range of growth temperatures are possible: a significant difference between surface and bulk compositions is observed between 620 and 680°C reaching a maximum near 650°C. This influence of the growth temperature is discussed in the framework of the previously suggested correlation between Ga segregation and the so-called forbidden temperature zone in MBE growth of AlxGa1-xAs." @default.
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- W2000407843 date "1987-02-01" @default.
- W2000407843 modified "2023-10-11" @default.
- W2000407843 title "Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxy" @default.
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- W2000407843 doi "https://doi.org/10.1016/0022-0248(87)90076-5" @default.
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