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• W2000409718 abstract "Photoreflectance spectroscopy has been used to study the surface electric field of Si delta-doped GaAs grown by molecular beam epitaxy at a low substrate temperature (230 °C). Franz–Keldysh oscillations in the reflectance spectra are observed for samples annealed above 700 °C for 10 min. The deduced surface electric field increases with annealing temperatures and with a decrease in spacer thickness between surface and the delta-doped plane. The evolution of photoreflectance spectra can be explained by the activation of Si donors and Fermi level pinned at surface due to the redistribution of As precipitates." @default.
• W2000409718 created "2016-06-24" @default.
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• W2000409718 date "1995-03-01" @default.
• W2000409718 modified "2023-09-26" @default.
• W2000409718 title "Photoreflectance study of Si delta‐doped low‐temperature GaAs grown by molecular beam epitaxy" @default.
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• W2000409718 doi "https://doi.org/10.1063/1.358788" @default.
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