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- W2000412859 abstract "Multi-quantum well 1.55 µ m lasers using compressively strained InGaAsP wells and tensile-strained InGaAsP barriers with the same As/P ratio are advantageous with respect to thermal stability and ease of metalorganic vapor phase epitaxial (MOVPE) growth. The composition of strongly strained (≤±1.3%) quaternary layers with As content y =0.75 but different Ga contents x is analyzed using X-ray diffraction and photoluminescence, and also, for the first time, electron probe microanalysis. It is found that x and y can be determined from the mismatch and a gap energy function E g ( x , y ), as well as from a vapor-solid relation, which formerly were established to hold only for nearly lattice-matched layers. Thermal treatment of laser structures only negligibly shifted the emission wavelength. Nearly strain-compensated 2-well lasers on n- and p-substrates reveal extrapolated threshold current densities of 190 and 730 A/cm 2 , respectively, which are the lowest values reported so far for a constant- y material. Constricted-mesa 2-well DFB lasers on p-substrates show threshold currents of 10 to 20 mA and a modulation capability of 8 Gb/s." @default.
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- W2000412859 date "1995-07-01" @default.
- W2000412859 modified "2023-09-27" @default.
- W2000412859 title "Composition Analysis and Distributed Feedback Lasers of Strained InGaAsP Quantum Wells with Constant As/P Ratio" @default.
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- W2000412859 doi "https://doi.org/10.1143/jjap.34.3486" @default.
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