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- W2000414720 abstract "AlN films were synthesized on GaAs(001) and GaAs(110) surfaces at room temperature by a reaction of evaporated Al-atoms and NH3-molecules. Chemical properties were studied by the use of photoemission spectroscopy. GaAs(001) and GaAs(110) surfaces were cleaned by etching with atomic hydrogen and by cleavage in situ, respectively. With the Ga(3d) and As(3d) core lines of the untreated GaAs(001) surface, two components are observed shifted by 1.3 and 3.1 eV to higher binding energies, respectively. They are attributed to the native oxides and found to decrease in intensity by about 60% and 90% after exposures of 6.8 × 105 L of activated hydrogen, respectively. The O(1s) core-line intensity was found to decrease by 70%, while the intensity of the As(3d) signal excited with Zr(Mζ) radiation is decreased by 30% compared to the value obtained with the untreated GaAs(001l) surface. The final surfaces were Ga-rich. The AlN films deposited on GaAs(001) and GaAs(110) surfaces were stoichiometric for impinging rate ratios z = v(NH3)v(Al) larger than 105. The data for the GaAs(110) surface indicate homogeneous growth and abrupt interfaces. For GaAs(001) surfaces the exponential decay has a smaller slope. On these surfaces growth is inhomogeneous." @default.
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- W2000414720 date "1994-04-01" @default.
- W2000414720 modified "2023-10-14" @default.
- W2000414720 title "Formation of AlN films on GaAs(001) and GaAs(110) surfaces by reactive molecular beam deposition" @default.
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- W2000414720 doi "https://doi.org/10.1016/0039-6028(94)90439-1" @default.
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