Matches in SemOpenAlex for { <https://semopenalex.org/work/W2000433265> ?p ?o ?g. }
Showing items 1 to 79 of
79
with 100 items per page.
- W2000433265 endingPage "768" @default.
- W2000433265 startingPage "763" @default.
- W2000433265 abstract "The accurate prediction of dopant ion implantation profiles both before and after thermal processing is becoming increasingly critical in the design of ultra-large scale integration (ULSI) sub-micron devices. In this paper, the ion implantation moments of boron, phosphorus and arsenic dopants implanted into thin film titanium, tungsten and cobalt suicides are calculated using Monte Carlo, Boltzmann transport equation and look-up table approaches. Four ion implantation simulators are evaluated: the TRansport of Ions in Matter (TRIM89) Monte Carlo code, RAMM and SUPREM-3 transport equation codes and PREDICT-1.4 which relies on look-up tables for its calculations. Theoretical results are subsequently compared with experimentally measured boron, phosphorus and arsenic range and straggle parameters in thermally reacted titanium silicide thin films obtained using secondary ion mass spectroscopy (SIMS) and Rutherford backscattering spectrometry (RBS). Ion implantation energies were varied from 20 keV to 160 keV. It is demonstrated that SUPREM-3 and PREDICT-1,4 ion implantation codes do not at the present time accurately calculate the ion implantation moments of dopants implanted into the suicides investigated. However the overall correlation between TRIM, RAMM and the experimental data presented is very good. The ion implantation models in TRIM and RAMM could be employed as preprocessors in a more general ULSI sub-micron process simulator capable of modelling a doped silicide fabrication technology." @default.
- W2000433265 created "2016-06-24" @default.
- W2000433265 creator A5053964244 @default.
- W2000433265 creator A5056549707 @default.
- W2000433265 creator A5079337901 @default.
- W2000433265 creator A5091776836 @default.
- W2000433265 date "1991-04-01" @default.
- W2000433265 modified "2023-09-28" @default.
- W2000433265 title "Comparison of models for the calculation of ion implantation moments of implanted boron, phosphorus and arsenic dopants in thin film silicides" @default.
- W2000433265 cites W1988524201 @default.
- W2000433265 cites W1993586790 @default.
- W2000433265 cites W2024172140 @default.
- W2000433265 cites W2088581634 @default.
- W2000433265 doi "https://doi.org/10.1016/0168-583x(91)96275-p" @default.
- W2000433265 hasPublicationYear "1991" @default.
- W2000433265 type Work @default.
- W2000433265 sameAs 2000433265 @default.
- W2000433265 citedByCount "2" @default.
- W2000433265 countsByYear W20004332652022 @default.
- W2000433265 crossrefType "journal-article" @default.
- W2000433265 hasAuthorship W2000433265A5053964244 @default.
- W2000433265 hasAuthorship W2000433265A5056549707 @default.
- W2000433265 hasAuthorship W2000433265A5079337901 @default.
- W2000433265 hasAuthorship W2000433265A5091776836 @default.
- W2000433265 hasConcept C113196181 @default.
- W2000433265 hasConcept C145148216 @default.
- W2000433265 hasConcept C171250308 @default.
- W2000433265 hasConcept C178790620 @default.
- W2000433265 hasConcept C185592680 @default.
- W2000433265 hasConcept C19067145 @default.
- W2000433265 hasConcept C191952053 @default.
- W2000433265 hasConcept C192562407 @default.
- W2000433265 hasConcept C2780547777 @default.
- W2000433265 hasConcept C2780901251 @default.
- W2000433265 hasConcept C41823505 @default.
- W2000433265 hasConcept C43617362 @default.
- W2000433265 hasConcept C49040817 @default.
- W2000433265 hasConcept C501308230 @default.
- W2000433265 hasConcept C544956773 @default.
- W2000433265 hasConcept C57863236 @default.
- W2000433265 hasConcept C77671233 @default.
- W2000433265 hasConceptScore W2000433265C113196181 @default.
- W2000433265 hasConceptScore W2000433265C145148216 @default.
- W2000433265 hasConceptScore W2000433265C171250308 @default.
- W2000433265 hasConceptScore W2000433265C178790620 @default.
- W2000433265 hasConceptScore W2000433265C185592680 @default.
- W2000433265 hasConceptScore W2000433265C19067145 @default.
- W2000433265 hasConceptScore W2000433265C191952053 @default.
- W2000433265 hasConceptScore W2000433265C192562407 @default.
- W2000433265 hasConceptScore W2000433265C2780547777 @default.
- W2000433265 hasConceptScore W2000433265C2780901251 @default.
- W2000433265 hasConceptScore W2000433265C41823505 @default.
- W2000433265 hasConceptScore W2000433265C43617362 @default.
- W2000433265 hasConceptScore W2000433265C49040817 @default.
- W2000433265 hasConceptScore W2000433265C501308230 @default.
- W2000433265 hasConceptScore W2000433265C544956773 @default.
- W2000433265 hasConceptScore W2000433265C57863236 @default.
- W2000433265 hasConceptScore W2000433265C77671233 @default.
- W2000433265 hasIssue "1-4" @default.
- W2000433265 hasLocation W20004332651 @default.
- W2000433265 hasOpenAccess W2000433265 @default.
- W2000433265 hasPrimaryLocation W20004332651 @default.
- W2000433265 hasRelatedWork W1582991821 @default.
- W2000433265 hasRelatedWork W182374824 @default.
- W2000433265 hasRelatedWork W1966205888 @default.
- W2000433265 hasRelatedWork W1999360756 @default.
- W2000433265 hasRelatedWork W2017509944 @default.
- W2000433265 hasRelatedWork W2022301034 @default.
- W2000433265 hasRelatedWork W2025264230 @default.
- W2000433265 hasRelatedWork W2054572570 @default.
- W2000433265 hasRelatedWork W2278579842 @default.
- W2000433265 hasRelatedWork W3212976177 @default.
- W2000433265 hasVolume "55" @default.
- W2000433265 isParatext "false" @default.
- W2000433265 isRetracted "false" @default.
- W2000433265 magId "2000433265" @default.
- W2000433265 workType "article" @default.