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- W2000452657 abstract "Abstract Wet-chemical etching of palladium doped silicon introduces at least seven new levels in the band gap. The depth profiles of the levels associate them with three different palladium–hydrogen complexes. An analysis of the profiles allows us to correlate the levels to complexes with one, two or three hydrogen atoms. Evidence for a complete electrical passivation of substitutional Pd is presented by a complex which contains at least four hydrogen atoms." @default.
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- W2000452657 date "1999-12-01" @default.
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- W2000452657 title "Depth profiles of palladium–hydrogen complexes in silicon" @default.
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- W2000452657 doi "https://doi.org/10.1016/s0921-4526(99)00497-4" @default.
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