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• W2000456583 abstract "Porous 3C-SiC (pSiC) samples with different pore diameters were prepared from poly crystalline N-type 3C-SiC film by electrochemical anodization. The pSiC surface was chemically modified by the sputtering of Pd nanoparticles as a hydrogen catalyst. In this work, two kinds of hydrogen sensors are employed for high temperature application. The variations of the electrical resistance and current in the presence of nitrogen diluted with hydrogen demonstrated that Pd deposited pSiC samples have the ability to detect hydrogen at high temperatures." @default.
• W2000456583 created "2016-06-24" @default.
• W2000456583 creator A5028577029 @default.
• W2000456583 creator A5065045539 @default.
• W2000456583 date "2011-10-01" @default.
• W2000456583 modified "2023-09-27" @default.
• W2000456583 title "Fabrication and characteristics of hydrogen sensors based on porous SiC for harsh environments" @default.
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• W2000456583 doi "https://doi.org/10.1109/icsens.2011.6126945" @default.
• W2000456583 hasPublicationYear "2011" @default.
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