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• W2000459638 abstract "X-ray diffraction (XRD) measurements of Φ scan in different χ angle in skew geometry for GaN films have shown that the peak widths of Φ scan decrease with the increment of angle χ. The FWHM of ω scan also increases with the inclination angle and reaches to be equal until the reflection plane is perpendicular to the surface of the sample. Based on these measured results, we developed a method to determine directly the twist angle of un-doped and Si-doped GaN films grown on c-sapphire substrates by MOCVD." @default.
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• W2000459638 date "2003-07-01" @default.
• W2000459638 modified "2023-10-16" @default.
• W2000459638 title "Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction" @default.
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• W2000459638 doi "https://doi.org/10.1016/s0022-0248(03)01211-9" @default.
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