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- W2000463370 abstract "High-purity InP layers are grown using an LPE technique with Co addition. In an In–P solution, Co combines with P to form a CoP precipitate. Solution impurities were removed by incorporation into the CoP precipitate and the In–P solution was purified as a result. High-purity InP layers with 100,000–110,000 cm 2 /Vs of Hall mobility at 77 K were obtained by a combination of adding the Co and baking the In–P solution in wet hydrogen." @default.
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- W2000463370 date "1987-12-01" @default.
- W2000463370 modified "2023-09-27" @default.
- W2000463370 title "High-Purity LPE Growth of InP by Co Addition to an In–P Melt" @default.
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- W2000463370 doi "https://doi.org/10.1143/jjap.26.1997" @default.
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