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- W2000464101 abstract "Epitaxial growth of ZrO<sub>2</sub> has been achieved on MOCVD-grown GaN(0001) templates by oxides molecular beam epitaxy using reactive H<sub>2</sub>O<sub>2</sub> for oxygen and organometallic source for Zr. Utilizing a low temperature buffer layer followed by high temperature <i>insitu </i>annealing and high-temperature growth, monoclinic (100)-oriented ZrO<sub>2</sub> thin films were obtained. The full width at half maximum of ZrO<sub>2</sub> (100) rocking curve was 0.4 arc degree for 30-nm-thick films and the rms roughness for a 5&mgr;m by 5 &mgr;m AFM scan was 4 Å. The employment of epitaxial ZrO<sub>2</sub> layer in the AlGaN/GaN heterojunction field effect trasnsistor as a gate dielectric has resulted in the increase of the saturation-current density and pinch-off voltage as well as in near symmetrical gate-drain I-V behavior." @default.
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- W2000464101 date "2007-02-08" @default.
- W2000464101 modified "2023-09-25" @default.
- W2000464101 title "AlGaN/GaN MOS transistors using crystalline ZrO 2 as gate dielectric" @default.
- W2000464101 doi "https://doi.org/10.1117/12.706808" @default.
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