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- W2000467298 abstract "This paper reports an investigation of the Bi/GaAs interface using low-energy electron diffraction (LEED), Auger, angle resolved photoemission, and high-resolution core level photoemission. The LEED results for Bi overlayers show a 1×1 pattern with the same orientation and lattice spacing as the GaAs(110) cleavage face, while the core level attenuation profiles show an ideal layer-by-layer growth mode for at least 2.5 monolayers (ML). Quantitative analysis of the core level data for 1 ML of Bi on n-type GaAs shows 660 meV of band bending and two bonding sites for the Bi on the GaAs surface. The two bonding sites are determined to be Bi–As and Bi–Ga bonding configurations. A zig–zag chain model is proposed for the first monolayer of Bi atoms on the GaAs surface. The Bi overlayers exhibit a density of states up to the Fermi level which is ∼0.7 eV above the GaAs valence-band maximum. For temperatures between 250 and 350 °C all but the last monolayer of Bi is desorbed from the surface, and above 350 °C the remaining Bi is rapidly lost from the surface. Comparison to the Sb/GaAs interface indicates the importance of stuctural as well as electronic properties of the interface materials in ordered overlayer growth." @default.
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- W2000467298 date "1989-05-01" @default.
- W2000467298 modified "2023-09-23" @default.
- W2000467298 title "Electronic structure of an ordered overlayer on a semiconductor: Bi/GaAs(110)" @default.
- W2000467298 doi "https://doi.org/10.1116/1.575809" @default.
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