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- W2000470004 abstract "Current-voltage and conductance-voltage (G-V) measurements on three-layer Al∕C60∕CdSe nanoparticles∕C60∕indium tin oxide (ITO) structures fabricated by using a spin-coating method showed a nonvolatile electrical bistable behavior. Capacitance-voltage (C-V) measurements on Al∕C60∕CdSe nanoparticles∕C60∕ITO structures showed a clockwise hysteresis with a flatband voltage shift due to the existence of the CdSe nanoparticles, indicative of memory effects in the devices. Current-time measurements showed that the devices exhibited excellent memory retention ability at ambient conditions. Possible operating mechanisms for the memory effects in the Al∕C60∕CdSe nanoparticles∕C60∕ITO devices are described on the basis of the G-V and the C-V results." @default.
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- W2000470004 date "2007-10-15" @default.
- W2000470004 modified "2023-10-12" @default.
- W2000470004 title "Memory effect of nonvolatile bistable devices based on CdSe∕ZnS nanoparticles sandwiched between C60 layers" @default.
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- W2000470004 doi "https://doi.org/10.1063/1.2801357" @default.
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