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- W2000473863 abstract "Large-signal computer simulations of high-low and low-high-low IMPATT-diode structures show that the high experimental efficiencies of such structures are not related to the avalanche-region voltage by the term (1 − VAV/VDC) as predicted by simple theory. Other reasons are suggested for the high experimental efficiencies of such structures." @default.
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- W2000473863 date "1974-01-01" @default.
- W2000473863 modified "2023-09-25" @default.
- W2000473863 title "Efficiency considerations of high-low- and low-high-low-doping GaAs IMPATT diodes" @default.
- W2000473863 doi "https://doi.org/10.1049/el:19740429" @default.
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