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• W2000478766 abstract "A contaminant-free C-terminated 6H–SiC (0001) surface has been successfully prepared by a two-step method, which combines H2:He (1:1) plasma and heating at 940 °C for 100 min. On this surface, a high-quality GaN (0001) thin film is obtained by radio-frequency nitrogen-plasma- assisted molecular-beam epitaxy. Near-band-edge emissions have been observed from some of these epilayers, depending primarily on the substrate surface conditions. Auger electron spectroscopy measurements show that temperatures of 940–1245 °C are necessary to thermally desorb the oxide and carbide from 6H–SiC substrates. At 1040 °C for the C-face SiC and 1150 °C for the Si-face SiC, crystalline damage was reported in the form of graphite formation on the surface. This graphite was observed through x-ray photoelectron spectroscopy. Structural analysis by x-ray diffraction and photoluminescence indicates very good in-plane alignment of the GaN epilayers as the substrates are cleaned using H2:He (1:1) plasma at 940 °C for 100 min." @default.
• W2000478766 created "2016-06-24" @default.
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• W2000478766 date "2001-01-01" @default.
• W2000478766 modified "2023-09-26" @default.
• W2000478766 title "GaN grown on two-step cleaned C-terminated 6H–SiC by molecular-beam epitaxy" @default.
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• W2000478766 doi "https://doi.org/10.1116/1.1329120" @default.
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