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- W2000480470 abstract "We present the results of experiments aimed at improving the lifetime (longevity) of Si photoconductive semiconductor switches (PCSS). Because damage at the metal-semiconductor interface is the primary damage mechanism in most PCSS, we have tested different contact metallizations. The test setup utilizes: a Nd:YAG laser that operates at 540 Hz with 50 mJ, 10 ns FWHM pulses; a circuit that charges a 50 (Omega) line in 800 ns and discharges it in 20 ns through a 50 (Omega) load; and a lateral switch geometry and 0.25 cm by 0.25 cm switches. The contacts examined include: Cr(diffused)-Cr-Mo-Au, Al(diffused)-Cr-Mo-Au, <SUP>31</SUP>P(ion implanted)-Ti-Pt, Al(diffused)-Pt-Ti-Pd-Au, and edge contacts. In the case of the Cr contacts we have tried thicker Mo or Au layers. For the Al contacts we have tried 1 micrometers and 0.1 micrometers thick depositions. Most contacts survived 10<SUP>7</SUP> pulses when switching 32 kV/cm (8 kV over 0.25 cm). The Al diffused went up to 44 kV/cm (1 X 10<SUP>5</SUP> pulses). The implanted P switch was switched 2.2 X 10<SUP>7</SUP> times at 44 kV/cm and 0.9 X 10<SUP>6</SUP> times at 48 kV/cm." @default.
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- W2000480470 date "1993-06-09" @default.
- W2000480470 modified "2023-09-27" @default.
- W2000480470 title "<title>Long-lifetime silicon photoconductive semiconductor switches</title>" @default.
- W2000480470 doi "https://doi.org/10.1117/12.146560" @default.
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