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- W2000482359 abstract "InGaN multi-quantum-well-structure laser diodes (LDs) with an emission wavelength of longer than 420 nm were grown on both an epitaxially laterally overgrown GaN (ELOG) substrate and an ELOG on a free-standing GaN substrate by a metaorganic chemical vapor deposition method. The wavelength dependence of InGaN LD characteristics was investigated. It was found that there was a strong relationship between the threshold current density and the emission wavelength of LDs. The LDs with the emission wavelength of 450 nm grown on the ELOG on a free-standing GaN substrate were demonstrated. The threshold current density and voltage of these LDs were 2.8 kA/cm 2 and 4.5 V, respectively. The estimated lifetime was approximately 5000 h under 50°C continuous-wave operation at an output power of 5 mW." @default.
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- W2000482359 date "2001-05-01" @default.
- W2000482359 modified "2023-10-18" @default.
- W2000482359 title "Wavelength Dependence of InGaN Laser Diode Characteristics" @default.
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- W2000482359 doi "https://doi.org/10.1143/jjap.40.3075" @default.
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