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- W2000498672 abstract "Formation of shallow source/drain junctions by using HCl-based Si etch followed by selective deposition of in situ heavily B-doped SiGe in a reduced pressure chemical vapor deposition reactor is pr ..." @default.
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- W2000498672 title "Formation of Shallow Junctions by HCl-Based Si Etch Followed by Selective Epitaxy of B-Doped Si[sub 1−x]Ge[sub x] in RPCVD" @default.
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