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- W2000504242 abstract "Abstract Photoluminescence excitation (PLE) spectra of deep acceptor states in ZnSe, for example the Cu-related luminescence band at ≈1.95 eV, contain a prominent excitation band at ≈3.25 eV. This band lies above the structure marking the lowest direct EO band gap Eg by the spin-orbit splitting energy Δ of the valence bands at Γ. The higher energy feature is either absent or greatly de-emphasised in the PLE spectra of shallow acceptor states in ZnSe and of the oxygen iso-electronic trap in ZnTe, where the electron rather than the hole is tightly bound. However, a significant PLE component at Eg + Δ is observed for deep acceptor-like states in ZnTe, where Δ is ≈0.95 eV. Efficient PLE at E + Δ for luminescence from deep acceptor-like states is shown to be consistent with the extended wave-vector contributions to the bound state wave-functions of holes of binding energies ≈Δ." @default.
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- W2000504242 date "1980-01-01" @default.
- W2000504242 modified "2023-09-23" @default.
- W2000504242 title "Valence band contributions to photoluminescence excitation spectra of tightly bound holes in zincblende semiconductors" @default.
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- W2000504242 doi "https://doi.org/10.1016/0022-2313(80)90021-6" @default.
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