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- W2000507610 abstract "We proposed a novel through silicon via (TSV) exposure process comprising Si/Cu grinding, electroless Ni–B plating, and wet etching of Si. To grind Cu and Si simultaneously without burning and smearing Cu, we used a novel grinding wheel (vitrified-bond type) and performed in situ cleaning of grinding wheel by using a high pressure micro jet. The electroless Ni–B plating was performed to cover the Cu surface and prevent Cu etching during wet etching of Si. The wet etching of Si was performed using KOH solution. By time-of-flight secondary ion mass spectrometry, we investigated the presence of metal contaminants in the Si region between TSVs after being subjected to the proposed TSV-exposed process. The results showed that this process suppressed the generation of Cu contaminants below 1.0 × 1011 atoms/cm2." @default.
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- W2000507610 date "2014-04-22" @default.
- W2000507610 modified "2023-09-25" @default.
- W2000507610 title "Novel through silicon via exposure process comprising Si/Cu grinding, electroless Ni–B plating, and wet etching of Si" @default.
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- W2000507610 doi "https://doi.org/10.7567/jjap.53.05ge02" @default.
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