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- W2000511385 abstract "The mobility reduction in high-κ gate stacks is discussed in terms of remote charge scattering. The mobility is recovered by growing an additional layer of SiO2 at the interface between the high-κ dielectric and the silicon substrate. A good explanation for this finding is that the Coulomb potential which is induced by the fixed charge at the dielectric/SiO2 interface is responsible for the scattering of electrons." @default.
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- W2000511385 date "2002-07-15" @default.
- W2000511385 modified "2023-10-16" @default.
- W2000511385 title "Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate Stacks" @default.
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- W2000511385 doi "https://doi.org/10.1143/jjap.41.4521" @default.
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