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- W2000511533 abstract "Abstract The process of interdiffusion and compound formation in Mo/Pd/Si thin films was studied between 250 and 750°C via sheet resistance measurements, X-ray diffraction, Rutherford backscattering spectrometry and Auger electron spectroscopy. The results indicate that thermal annealing of the Mo/Pd/Si thin film couples between 250 and 475°C lead to PdSi interaction, Pd 2 Si compound formation and consequently a small increase in the sheet resistance. In contrast, exposure of the Mo/Pd/Si thin films to temperatures higher than 475°C lead to MoPd 2 Si interaction in addition to PdSi interaction, MoSi 2 compound formation and a dramatic increase in the sheet resistance. The influence of interdiffusion and compound formation on the interface morphology in the Mo/Pd/Si system was studied, and the implications of these observations to a very-large-scale integration contact metallization utilizing an Mo/Pd 2 Si/Si system are discussed." @default.
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- W2000511533 date "1986-10-01" @default.
- W2000511533 modified "2023-09-27" @default.
- W2000511533 title "Interdiffusion and compound formation in the Mo/Pd/Si thin film metallization system" @default.
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- W2000511533 doi "https://doi.org/10.1016/0040-6090(86)90178-1" @default.
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