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• W2000517450 abstract "We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak in the optical conductivity persists even at temperatures when the resistivity is well beyond the semiclassical Mott-Ioffe-Regel limit. Local random potential does not introduce new charge carriers, but it induces effective local carrier doping and broadens the bandwidth. This makes the system more metallic, in agreement with the recent experiments on X-ray irradiated charge-transfer salts." @default.
• W2000517450 created "2016-06-24" @default.
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• W2000517450 date "2010-02-23" @default.
• W2000517450 modified "2023-10-17" @default.
• W2000517450 title "Influence of disorder on incoherent transport near the Mott transition" @default.
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• W2000517450 doi "https://doi.org/10.1103/physrevb.81.075118" @default.
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