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- W2000520585 abstract "Using polycrystalline GaSb substrates and LPE techniques, the orientation dependence of the growth rate was studied for AlGaInSb quaternary III-V alloys. On differently oriented GaSb substrate grains contacting the same melt different growth rates have been observed. In extreme cases, definite inhibition of growth on particular orientations was detected. It occurred that even though a thick epitaxial layer was formed on one side of a twinned region, no epitaxial layer at all was found on the other side. Revealing the substrate grain structure by chemical etching and determining the orientations for both the substrate crystallites and the epitaxial layers, a correlation was found between the substrate structure and morphology and the growth rate of the overgrown epitaxial layer. It was observed that high angle grain boundaries inhibit, and low angle grain boundaries enhance the growth rate." @default.
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- W2000520585 date "1985-03-01" @default.
- W2000520585 modified "2023-09-25" @default.
- W2000520585 title "Selective liquid phase epitaxy of AlGaInSb on GaSb substrates" @default.
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- W2000520585 doi "https://doi.org/10.1016/0022-0248(85)90086-7" @default.
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