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• W2000520742 abstract "The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance frequency dispersion. In situ deposition and analysis techniques were used to study different surface preparations, including NH4OH, Si-flux, and atomic hydrogen exposures, as well as Si passivation depositions prior to in situ atomic layer deposition of Al2O3. As–O bonding was removed and a bond conversion process with Si deposition is observed. The accumulation capacitance frequency dispersion was removed only when a Si interlayer and a specific surface clean were combined." @default.
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• W2000520742 date "2007-10-15" @default.
• W2000520742 modified "2023-10-01" @default.
• W2000520742 title "Frequency dispersion reduction and bond conversion on n-type GaAs by <i>in situ</i> surface oxide removal and passivation" @default.
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• W2000520742 doi "https://doi.org/10.1063/1.2801512" @default.
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