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- W2000524165 abstract "Continued development of high-efficiency multi-junction solar cells requires growth of lattice-mismatched materials. Today, the need for lattice matching both restricts the bandgap combinations available for multi-junctions solar cells and prohibits monolithic integration of high-efficiency III-V materials with low-cost silicon solar cells. The use of III-V nanowires is the only known method for circumventing this lattice-matching constraint, and therefore it is necessary to develop growth of nanowires with bandgaps >1.4 eV. Here we present the first gold-free gallium arsenide phosphide nanowires grown on silicon by means of direct epitaxial growth. We demonstrate that their bandgap can be controlled during growth and fabricate core-shell nanowire solar cells. We further demonstrate that surface passivation is of crucial importance to reach high efficiencies, and present a record efficiency of 10.2% for a core-shell single-nanowire solar cell. The use of III-V semiconductor nanowires can overcome the need for lattice matching in multi-junction solar cells, which restricts the choice of materials and their bandgaps. This work demonstrates efficient solar cells with GaAsP single nanowires with tunable bandgap and grown on low-cost Si substrates." @default.
- W2000524165 created "2016-06-24" @default.
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- W2000524165 date "2013-02-19" @default.
- W2000524165 modified "2023-10-02" @default.
- W2000524165 title "Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon" @default.
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- W2000524165 doi "https://doi.org/10.1038/ncomms2510" @default.
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