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- W2000526539 abstract "Excited hydrogen, whether atomic or ionised, chemisorbs to the clean surfaces of III–V compounds (GaAs, InP) up to the monolayer coverage range roughly. Beyond this initial chemisorption stage, the further interaction of excited hydrogen dissociates the substrate and leads to the formation of (i) the metal from the group III element, and (ii) one (or more) hydrogenated species of the group V element, which may remain adsorbed. The stability of the latter species as a function of temperature depends on the chemical nature of the substrate and its orientation. Experimental evidences of this dissociation are drawn from various techniques, and examples are given for H/GaAs(1 1 0), H/InP(1 1 0), H+2/(GaAs(1 1 0) and H/InP(1 1 0). Properties of the systems specific of the dissociation stage are presented." @default.
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- W2000526539 date "1991-04-01" @default.
- W2000526539 modified "2023-09-30" @default.
- W2000526539 title "Dissociation effects of H and H+2 on clean III–V compounds" @default.
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- W2000526539 doi "https://doi.org/10.1016/0921-4526(91)90160-g" @default.
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