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- W2000527438 abstract "Nanometer sized crystalline (nc) Si formation in the SiH4 plasma cell with very-high-frequency (144 MHz) excitation has been investigated with the Ar and H2 dilution method. The SiH4 plasma cell is attached to the ultra-high-vacuum chamber. The crystalline Si is formed in the gas phase of the plasma cell by coalescence of radicals produced from SiH4. The nc-Si is extracted out of the plasma cell through the orifice to the ultra-high-vacuum chamber. The deposition rate increases with Ar dilution and decreases with H2 dilution. The average grain size decreases with H2 dilution. The dependence of the deposition rate and the grain size on the dilution condition is discussed." @default.
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- W2000527438 date "1996-05-01" @default.
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- W2000527438 title "Nanocrystalline silicon formation in a SiH4 plasma cell" @default.
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- W2000527438 doi "https://doi.org/10.1016/0022-3093(96)00161-5" @default.
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