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- W2000531161 abstract "Abstract We report on the formation of V2O5 semiconductor thin films using rapid thermal annealing (RTA) on sputter-deposited amorphous VOx. DC magnetron sputtering was used to obtain an initial amorphous VOx film on p-Si substrate, followed by O2- and N2-RTA at two different temperatures of 400 and 500 °C for 3 min. According to X-ray diffraction results, O2-RTA is more effective to achieve the semiconducting phase, V2O5 than N2-RTA, which caused some electrically conducting phases such as V4O9 or V6O13 at 400 °C. Electrical characterization on Au/vanadium oxide/p-Si structure exhibited ohmic-like behavior when the thin film mainly contains those metallic phases while the structures were strongly rectifying once the film consists of the semiconducting phase, V2O5." @default.
- W2000531161 created "2016-06-24" @default.
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- W2000531161 date "2005-05-01" @default.
- W2000531161 modified "2023-09-26" @default.
- W2000531161 title "Electrical characteristics of V2O5 thin films formed on p-Si by sputter-deposition and rapid thermal annealing" @default.
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- W2000531161 doi "https://doi.org/10.1016/j.apsusc.2004.10.100" @default.
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