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• W2000537894 abstract "To study thermomechanical strain induced by the mismatch of coefficients of thermal expansion in through-silicon vias (TSVs) and thus provide fundamental understanding of TSV reliability, strain measurements have been performed with synchrotron x-ray diffraction (XRD). The measured strains are available as two-dimensional (2D) distribution maps, whereas the strain distributions in TSVs are three-dimensional (3D) in nature. To understand this 3D to 2D data projection process, a data interpretation method based on beam intensity averaging is proposed and validated with measurements. The proposed method is applicable to XRD strain measurements on thin as well as thick samples." @default.
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• W2000537894 date "2013-07-08" @default.
• W2000537894 modified "2023-10-16" @default.
• W2000537894 title "Thermomechanical strain measurements by synchrotron x-ray diffraction and data interpretation for through-silicon vias" @default.
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• W2000537894 doi "https://doi.org/10.1063/1.4813742" @default.
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