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- W2000544745 abstract "Amorphizing n-type 〈100〉 silicon by tin implantation prior to implanting 10 keV boron and then annealing for 30 min at 800 °C results in a 0.22-μm-deep p+/n junction. The implanted tin prevents boron channeling, enhances the quality of the solid phase epitaxial regrowth of the silicon, and shows no measurable diffusion. A discontinuous band of dislocation loops, 20–30 nm in diameter, with a density below 1010 cm−2 remains at the original amorphous-crystalline interface after annealing. Junctions are nearly ideal and are characterized at −5 V reverse bias by an areal leakage of −5 nA cm−2 and a peripheral leakage less than −0.1 fA μm−1." @default.
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- W2000544745 date "1986-09-08" @default.
- W2000544745 modified "2023-09-26" @default.
- W2000544745 title "Shallow junction formation by preamorphization with tin implantation" @default.
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- W2000544745 doi "https://doi.org/10.1063/1.97045" @default.
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