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- W2000546757 abstract "A non-recessed-gate enhancement-mode HEMT was fabricated on an undoped quaternary AlInGaN/GaN heterostructure with a thin barrier AlInGaN layer. The maximum drain current of 252 mA/mm and peak transconductance of 175 mS/mm were obtained on a 2 µm-length-gate HEMT with a large threshold voltage of 0.57 V. The enhancement-mode operation was observed in a large source-drain voltage range up to 40 V. The results imply that AlInGaN is a promising candidate for high power and high frequency applications." @default.
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- W2000546757 date "2006-01-01" @default.
- W2000546757 modified "2023-10-16" @default.
- W2000546757 title "Enhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate" @default.
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- W2000546757 doi "https://doi.org/10.1049/el:20061150" @default.
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