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- W2000554276 abstract "Abstract The prospect of Erbium silicide (ErSi2) contacts for source/drain metallization in ultra-thin n-channel silicon-on-insulator (SOI) MOSFETs have been studied. Very thin layer of ErSi2 was formed on Si(001) by Er deposition followed by in situ annealing in the range of 400–600 °C under ultra-high vacuum (UHV) condition. The silicification process was found to depend on surface conditions prior to the Er deposition. The silicide layers were found to be stable up to a temperature of 700 °C. Good ohmic nature on n-type Si and well-defined rectifying behavior on p-type Si have confirmed a low electron barrier height at the ErSi2/Si contact. A simplified analysis based on transmission line modeling has been used to show that parasitic source/drain resistances of the order of 100 Ω μm or less can be achieved for SOI thickness of 10 nm." @default.
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- W2000554276 date "2002-02-01" @default.
- W2000554276 modified "2023-09-25" @default.
- W2000554276 title "Use of ErSi2 in source/drain contacts of ultra-thin SOI MOSFETs" @default.
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- W2000554276 doi "https://doi.org/10.1016/s0921-5107(01)00834-0" @default.
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