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• W2000559535 abstract "A technique has been developed for the growth of device quality AlxGa1−xAs over the entire range of composition from x = 0 to 1.0. Results for GaAs and AlxGa1−xAs growth using the organometallic compounds triethylgallium and trimethylaluminum are described. The results indicate that the GaAs is of excellent quality for optoelectronic devices. The alloys are highly compensated and emit no detectable photoluminescence (PL), presumably due to C incorporation. A hybrid technique where HCl is added to the organometallic gas stream in an rf heated hot wall graphite reactor has resulted in much lower C incorporation. Morphology and composition control are both excellent for substrate temperatures of 700–800°C. The electrical properties indicate that the material is not highly compensated and the PL intensity is found to be ∼ 15% of LPE material with similar composition and doping level. The growth process and materials properties are described in detail." @default.
• W2000559535 created "2016-06-24" @default.
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• W2000559535 date "1978-01-01" @default.
• W2000559535 modified "2023-10-14" @default.
• W2000559535 title "VPE growth of AlxGa1−xAs" @default.
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• W2000559535 doi "https://doi.org/10.1016/0022-0248(78)90367-6" @default.
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