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- W2000565536 abstract "Thin uniform films of ZnO could be obtained by MOCVD using Zn(CH3)2-THF adduct and H2O as reactants. The film growth was carried out at atmospheric pressure. A vertical resistance-heated cold-wall reactor system was used. Highly c-axis oriented ZnO films being very smooth and having a low resistivity were grown on (100)Si and (100)Si/SiO2 under certain conditions. Epitaxial growth could be achieved on (1102)-sapphire. The dependence of the properties of the films on the growth conditions was investigated. Dünne ZnO-Schichten konnten durch MOCVD unter Verwendung von Zn(CH3)2-THF und H2O als Reaktanten erhalten werden. Das Filmwachstum wurde bei Atmosphärendruck durchgeführt. Es wurde ein vertikales, widerstandbeheiztes Kaltwandreaktorsystem verwendet. Auf (100)Si und (100)Si/SiO2 wurden bei bestimmten Bedingungen sehr ebene ZnO-Schichten mit stark ausgeprägter c-Achsentextur abgeschieden. Epitaktisches Wachstum konnte auf (1102) Saphir erreicht werden. Die Abhängigkeit der Filmeigenschaften von den Wachstumsbedingungen wurden untersucht." @default.
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- W2000565536 date "1988-05-01" @default.
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- W2000565536 title "Metalorganic chemical vapour deposition of oriented ZnO films" @default.
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- W2000565536 doi "https://doi.org/10.1002/crat.2170230511" @default.
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