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- W2000568575 abstract "The technique of implanting silicon wafers with sufficient oxygen to form a continuous buried oxide (BOX) layer is known as SIMOX (Separation by Implanting Oxygen). SIMOX wafers present leading-edge semiconductor technology with a great need for on-line process control. Development of thin (80 to 200 nm) BOX is a primary step toward improved device performance and cost reduction. Tight control of the BOX properties, such as the implant dose, thickness, refractive index, and composition, is required in the production. A method to characterize non-destructively BOX layer by means of FTIR normal incidence reflectance spectroscopy has been developed with a particular orientation to in-situ applications. A data reduction procedure based on multi-layer model delivers thickness and dielectric function of a thin BOX layer, and enables one to measure the implant dose with a precision of a tenth of a percent. A compact and robust FTIR spectrometer from On-Line Technologies, combined with sampling optics and sensitive detection, provides excellent signal-to- noise ratio and is well suited for a coupling with oxygen implantation machines for in-situ process control." @default.
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- W2000568575 date "1998-10-08" @default.
- W2000568575 modified "2023-09-26" @default.
- W2000568575 title "<title>FTIR reflectance characterization of SIMOX buried oxide layers</title>" @default.
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- W2000568575 doi "https://doi.org/10.1117/12.326654" @default.
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