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• W2000570860 abstract "We examined experimentally how the surface morphology, photoluminescence (PL) and X-ray diffraction depend on the amount of compressive strain in the InGaAsP layers grown by metal-organic vapor-phase epitaxy (MOVPE). It was found that there are two critical values of strain in the relaxation process. One is the threshold strain value (εc1) for the appearance of the cross-hatched pattern on the crystal surface and subsequent decrease in PL intensity. The other is that for the in-coherent growth (εc2), which leads to the broadening of the full-width half-maximum (FWHM) in the X-ray diffraction analysis. We also found that εc1 is in good accordance with the force–balance theory, while εc2 follows the energy–balance theory. We also examined their compositional wavelength (λg) dependence (λg of InGaAsP: 0.92 μm (InAsP), 1.15, 1.3 and 1.67 μm (InGaAs)). The εc1 of InAsP is approximately half those of the other materials. This is probably due to the relatively large Poisson's ratio for InAsP. On the other hand, εc2 of InGaAsP with λg of 1.15 and 1.3 μm is slightly smaller than that of InAsP or InGaAs. This can be explained by local strain fluctuation in a nanoscale region, i.e. the fluctuation is stronger for quaternary InGaAsP compared to that for ternary InAsP or InGaAs. These findings are very useful for the crystal growth of high-quality highly strained InGaAsP." @default.
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• W2000570860 date "2004-12-01" @default.
• W2000570860 modified "2023-09-23" @default.
• W2000570860 title "Strain relaxation in InGaAsP/InP grown by metal-organic vapor-phase epitaxy" @default.
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• W2000570860 doi "https://doi.org/10.1016/j.jcrysgro.2004.07.094" @default.
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