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• W2000578891 abstract "This paper presents an evaluation of process and temperature variability in PFET and NFET transistors using predictive 20nm FinFET technologies. The objective of this work is to evaluate the environment and physical variability impact in FinFET devices. The main physical parameters affected by process variability are fin width, fin height, gate length, metal gate workfunction and oxide thickness. Monte Carlo analysis shows high dependence of the workfunction fluctuations on the device behaviour. This work also evaluates the environment variability, investigating the influence of temperature variations. The main goal is to highlight the influence of these variations in the I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> current for predictive FinFET technologies." @default.
• W2000578891 created "2016-06-24" @default.
• W2000578891 creator A5004138848 @default.
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• W2000578891 date "2014-09-01" @default.
• W2000578891 modified "2023-09-30" @default.
• W2000578891 title "Evaluating the impact of environment and physical variability on the I<inf>ON</inf> current of 20nm FinFET devices" @default.
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• W2000578891 doi "https://doi.org/10.1109/patmos.2014.6951859" @default.
• W2000578891 hasPublicationYear "2014" @default.
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