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• W2000580601 abstract "To study mass transport phenomena in advanced microelectronic devices with X-rays requires penetration of dielectric and Si layers up to 30 μm thick. X-ray imaging at 1.8 keV photon energy provides a high amplitude contrast between Cu or Al interconnects and dielectric layers and can penetrate through the required thickness. To perform X-ray microscopy at 1.8 keV, a new Ru/Si multilayer was designed for the transmission X-ray microscope XM-1 installed at the Advanced Light Source in Berkeley. The mass flow in a passivated Cu interconnect was studied at current densities up to 107 A/cm2. In addition, we demonstrated the high material contrast from different elements in integrated circuits with a resolution of about 40 nm." @default.
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• W2000580601 date "2003-01-01" @default.
• W2000580601 modified "2023-09-30" @default.
• W2000580601 title "Electromigration in integrated circuit interconnects studied by X-ray microscopy" @default.
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• W2000580601 doi "https://doi.org/10.1016/s0168-583x(02)01565-3" @default.
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