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- W2000584107 abstract "Recent topics of the use of reflectance difference spectroscopy (RDS) to control and characterize the Si-surface oxidation and the InAs wetting-layer formation are reviewed. It is shown that by measuring the RD-spectrum oscillation one can control the thickness of layer-by-layer Si-surface oxides in an atomic scale. Moreover, by analyzing the RD spectra, the atomic structure and component of the SiO2/Si interface is characterized. On the other hand, the RD-spectrum change in the InAs growth on GaAs substrate before the quantum-dot formation enables us to clarify not only a variety of surface atomic structures of InAs wetting layers, such as (1×3), (2×3), and (2×4), but also the cation-alloying dynamic process of InAs wetting layers." @default.
- W2000584107 created "2016-06-24" @default.
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- W2000584107 date "2003-01-01" @default.
- W2000584107 modified "2023-09-23" @default.
- W2000584107 title "Characterization and Control of Surfaces and Interfaces by Reflectance Difference Spectroscopy -Recent Topics of Si Oxidation and InAs Wetting Layer-" @default.
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- W2000584107 doi "https://doi.org/10.1380/jsssj.24.779" @default.
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