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• W2000591532 startingPage "011908" @default.
• W2000591532 abstract "AlN has been grown on 4H-SiC (1-100) substrates by rf-plasma molecular beam epitaxy. The epilayers assume a metastable 4H structure to match the in-plane stacking arrangement of the substrate. Initial two-dimensional nucleation of 4H-AlN is revealed by reflection high-energy electron diffraction. The epitaxial quality is evidenced by narrow x-ray diffraction ω-scan linewidths less than 70 arcsec for both symmetric and asymmetric reflections. The AlN growth surface exhibits a smooth and anisotropic morphology similar to that of GaN (1-100). Large residual stress is present in the epilayers, consistent with incomplete relaxation of misfit strain during growth." @default.
• W2000591532 created "2016-06-24" @default.
• W2000591532 creator A5042754568 @default.
• W2000591532 creator A5069176223 @default.
• W2000591532 creator A5069398244 @default.
• W2000591532 date "2006-01-02" @default.
• W2000591532 modified "2023-09-26" @default.
• W2000591532 title "Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates" @default.
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• W2000591532 doi "https://doi.org/10.1063/1.2161809" @default.
• W2000591532 hasPublicationYear "2006" @default.
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