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- W2000592484 abstract "We have realized a high-switching-speed Si S-shaped negative-resistance diode having a thin MIS structure where the thickness of the SiO2 layer is less than 100 Å. It has a p-n-I (insulator)-M (metal) structure in contrast with a Shockley diode. The threshold and sustaining voltages are about 20 and 2–3 V, respectively. The regenerative nature of this device may be related to the minority carrier injection into the interface between the n layer and the insulating layer, and electron trapping in the interface states." @default.
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- W2000592484 date "1972-04-15" @default.
- W2000592484 modified "2023-09-26" @default.
- W2000592484 title "Thin‐MIS‐Structure Si Negative‐Resistance Diode" @default.
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- W2000592484 doi "https://doi.org/10.1063/1.1654143" @default.
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