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• W2000595947 abstract "The formation of metallic nanoclusters in a dielectric matrix leads to nonlinear optical properties with potential applications in optoelectronics. Ion implantation is a suitable technique to produce such clusters, but it suffers limitations in terms of amount of incorporated metal and thickness of doped material. High-energy ion-beam mixing has been used as an alternative to overcome these drawbacks. SiO2Ag multilayers are irradiated at room temperature with increasing fluences of 4.5-MeV Au ions. In situ RBS experiments provide information on the mixing process. Optical absorption measurements show the presence of Ag clusters in the irradiated sample." @default.
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• W2000595947 date "1996-07-01" @default.
• W2000595947 modified "2023-09-30" @default.
• W2000595947 title "High-energy ion-beam mixing: A new route to form metallic nanoclusters in a dielectric matrix" @default.
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• W2000595947 doi "https://doi.org/10.1016/0168-583x(95)01564-7" @default.
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