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• W2000598577 abstract "The formation of interfacial layers between silicon and the overgrown epitaxial SrTiO3 as a function of the growth temperature has been studied in detail using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. Models for the chemical compositions and atomic bonding states have been established. With a good understanding of the mechanisms of the interfacial layer formations, the molecular-beam epitaxy growth process can be well controlled to form high-quality, single-crystalline oxide films, as well as a desired interface between the grown oxide and silicon substrate. The epitaxial relationship has been found to be SrTiO3 (001)∥Si(001), and SrTiO3 〈100〉∥Si〈110〉." @default.
• W2000598577 created "2016-06-24" @default.
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• W2000598577 date "2003-01-13" @default.
• W2000598577 modified "2023-09-23" @default.
• W2000598577 title "The interface of epitaxial SrTiO3 on silicon: <i>in situ</i> and <i>ex situ</i> studies" @default.
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• W2000598577 doi "https://doi.org/10.1063/1.1536247" @default.
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