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• W2000604457 endingPage "12" @default.
• W2000604457 startingPage "1" @default.
• W2000604457 abstract "This work deals with the assessment of gate dielectric for 4H-SiC MOSFETs using technology based two-dimensional numerical computer simulations. Results are studied for variety of gate dielectric candidates with varying thicknesses using well-known Fowler-Nordheim tunneling model. Compared to conventional SiO 2 as a gate dielectric for 4H-SiC MOSFETs, high-<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML id=M1><mml:mrow><mml:mi>k</mml:mi></mml:mrow></mml:math>gate dielectric such as HfO 2 reduces significantly the amount of electric field in the gate dielectric with equal gate dielectric thickness and hence the overall gate current density. High-<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML id=M2><mml:mrow><mml:mi>k</mml:mi></mml:mrow></mml:math>gate dielectric further reduces the shift in the threshold voltage with varying dielectric thicknesses, thus leading to better process margin and stable device operating behavior. For fixed dielectric thickness, a total shift in the threshold voltage of about 2.5 V has been observed with increasing dielectric constant from SiO 2 (<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML id=M3><mml:mi>k</mml:mi><mml:mo>=</mml:mo><mml:mn>3.9</mml:mn></mml:math>) to HfO 2 (<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML id=M4><mml:mi>k</mml:mi><mml:mo>=</mml:mo><mml:mn>25</mml:mn></mml:math>). This further results in higher transconductance of the device with the increase of the dielectric constant from SiO 2 to HfO 2 . Furthermore, 4H-SiC MOSFETs are found to be more sensitive to the shift in the threshold voltage with conventional SiO 2 as gate dielectric than high- k dielectric with the presence of interface state charge density that is typically observed at the interface of dielectric and 4H-SiC MOS surface." @default.
• W2000604457 created "2016-06-24" @default.
• W2000604457 creator A5032370443 @default.
• W2000604457 date "2015-01-01" @default.
• W2000604457 modified "2023-10-16" @default.
• W2000604457 title "On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs" @default.
• W2000604457 cites W1127046226 @default.
• W2000604457 cites W1760057940 @default.
• W2000604457 cites W1878278205 @default.
• W2000604457 cites W1980592325 @default.
• W2000604457 cites W2003878098 @default.
• W2000604457 cites W2016944733 @default.
• W2000604457 cites W2021555028 @default.
• W2000604457 cites W2026817699 @default.
• W2000604457 cites W2042332274 @default.
• W2000604457 cites W2059470985 @default.
• W2000604457 cites W2064591977 @default.
• W2000604457 cites W2077714826 @default.
• W2000604457 cites W2093332181 @default.
• W2000604457 cites W2097283854 @default.
• W2000604457 cites W2103494630 @default.
• W2000604457 cites W2103983803 @default.
• W2000604457 cites W2108597019 @default.
• W2000604457 cites W2113990904 @default.
• W2000604457 cites W2117467130 @default.
• W2000604457 cites W2119217122 @default.
• W2000604457 cites W2122579082 @default.
• W2000604457 cites W2122866674 @default.
• W2000604457 cites W2130028915 @default.
• W2000604457 cites W2131912674 @default.
• W2000604457 cites W2156650445 @default.
• W2000604457 cites W2158361930 @default.
• W2000604457 cites W2159743396 @default.
• W2000604457 cites W2164289883 @default.
• W2000604457 cites W2171709997 @default.
• W2000604457 doi "https://doi.org/10.1155/2015/651527" @default.
• W2000604457 hasPublicationYear "2015" @default.
• W2000604457 type Work @default.
• W2000604457 sameAs 2000604457 @default.
• W2000604457 citedByCount "30" @default.
• W2000604457 countsByYear W20006044572015 @default.
• W2000604457 countsByYear W20006044572016 @default.
• W2000604457 countsByYear W20006044572017 @default.
• W2000604457 countsByYear W20006044572018 @default.
• W2000604457 countsByYear W20006044572019 @default.
• W2000604457 countsByYear W20006044572020 @default.
• W2000604457 countsByYear W20006044572021 @default.
• W2000604457 countsByYear W20006044572022 @default.
• W2000604457 countsByYear W20006044572023 @default.
• W2000604457 crossrefType "journal-article" @default.
• W2000604457 hasAuthorship W2000604457A5032370443 @default.
• W2000604457 hasBestOaLocation W20006044571 @default.
• W2000604457 hasConcept C113196181 @default.
• W2000604457 hasConcept C11413529 @default.
• W2000604457 hasConcept C119599485 @default.
• W2000604457 hasConcept C127413603 @default.
• W2000604457 hasConcept C133386390 @default.
• W2000604457 hasConcept C16317505 @default.
• W2000604457 hasConcept C165801399 @default.
• W2000604457 hasConcept C166972891 @default.
• W2000604457 hasConcept C172385210 @default.
• W2000604457 hasConcept C185592680 @default.
• W2000604457 hasConcept C192562407 @default.
• W2000604457 hasConcept C2779283907 @default.
• W2000604457 hasConcept C41008148 @default.
• W2000604457 hasConcept C43617362 @default.
• W2000604457 hasConcept C49040817 @default.
• W2000604457 hasConceptScore W2000604457C113196181 @default.
• W2000604457 hasConceptScore W2000604457C11413529 @default.
• W2000604457 hasConceptScore W2000604457C119599485 @default.
• W2000604457 hasConceptScore W2000604457C127413603 @default.
• W2000604457 hasConceptScore W2000604457C133386390 @default.
• W2000604457 hasConceptScore W2000604457C16317505 @default.
• W2000604457 hasConceptScore W2000604457C165801399 @default.
• W2000604457 hasConceptScore W2000604457C166972891 @default.
• W2000604457 hasConceptScore W2000604457C172385210 @default.
• W2000604457 hasConceptScore W2000604457C185592680 @default.
• W2000604457 hasConceptScore W2000604457C192562407 @default.
• W2000604457 hasConceptScore W2000604457C2779283907 @default.
• W2000604457 hasConceptScore W2000604457C41008148 @default.
• W2000604457 hasConceptScore W2000604457C43617362 @default.
• W2000604457 hasConceptScore W2000604457C49040817 @default.
• W2000604457 hasLocation W20006044571 @default.
• W2000604457 hasLocation W20006044572 @default.
• W2000604457 hasOpenAccess W2000604457 @default.
• W2000604457 hasPrimaryLocation W20006044571 @default.
• W2000604457 hasRelatedWork W2010390859 @default.
• W2000604457 hasRelatedWork W2045924893 @default.
• W2000604457 hasRelatedWork W2368176392 @default.
• W2000604457 hasRelatedWork W2735306492 @default.
• W2000604457 hasRelatedWork W2890924564 @default.
• W2000604457 hasRelatedWork W2895652696 @default.
• W2000604457 hasRelatedWork W2903976092 @default.
• W2000604457 hasRelatedWork W4253731651 @default.
• W2000604457 hasRelatedWork W4294672502 @default.
• W2000604457 hasRelatedWork W645755441 @default.
• W2000604457 hasVolume "2015" @default.
• W2000604457 isParatext "false" @default.

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