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• W2000609119 abstract "High-quality graphene was synthesized on Cu foil using inductively-coupled plasma chemical vapor deposition (ICPCVD). ICP is very effective, such that a few-layer graphene could be formed within a few seconds. However, the graphene thickness was gradually decreased by increasing the growth time and plasma power, finally being saturated at a single layer. The graphene quality was also significantly enhanced by the preferential etching of the structurally-disordered C structures, followed by the newly synthesized graphene layer. Understanding ICPCVD growth kinetics, governed by the graphene formation by C atoms and C etching by H atoms, is useful for the controllable synthesis of high-quality graphene for various applications." @default.
• W2000609119 created "2016-06-24" @default.
• W2000609119 creator A5012743457 @default.
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• W2000609119 date "2012-01-01" @default.
• W2000609119 modified "2023-10-18" @default.
• W2000609119 title "Controllable Synthesis of High-Quality Graphene Using Inductively-Coupled Plasma Chemical Vapor Deposition" @default.
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• W2000609119 doi "https://doi.org/10.1149/2.082204jes" @default.
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