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• W200062656 abstract "A review of past and current research on electronic devices based on the modulation of the surface potential of depletion, accumulation or inversion layers of bulk or thin film elemental or compound semiconductors whose fundamental bandgaps, Eg < 1 eV, reveals that the characteristics of the semi conductor-gate insulator interfaces determine, to a large extent, their charge carrier transport properties; in the case of metal-insulator-semiconductor (MIS) structures the energy levels, density and capture cross-sections of interface states as well as the type, density and spatial distribution of traps within the iasulator affect their DC drain current stability, their transconductance and their gain-bandwidth products. At this time, semiconductor-quasi-insulator-semiconductor heterostructures have superior properties compared to MIS structures and most of the MIS-related problems are also absent in modulation-doped two-dimensional electron gas heterojunction structures.KeywordsMolecular Beam EpitaxyGate VoltageGate InsulatorInversion LayerThin Film TransistorThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves." @default.
• W200062656 created "2016-06-24" @default.
• W200062656 creator A5013377104 @default.
• W200062656 date "1987-01-01" @default.
• W200062656 modified "2023-09-27" @default.
• W200062656 title "Narrow Bandgap Semiconductor Devices" @default.
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• W200062656 doi "https://doi.org/10.1007/978-1-4613-1879-8_20" @default.
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